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APTGL90A120T1G
Phase leg Trench + Field Stop IGBT4 Power module
5 Q1 7 8 Q2 CR2 9 10 1 2 12 3 4 NTC 6 11
VCES = 1200V IC = 90A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant
CR1
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C Max ratings 1200 110 90 150 20 385 150A @ 1150V Unit V A V W
April, 2009 1-5 APTGL90A120T1G - Rev 0
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGL90A120T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 75A Tj = 150C VGE = VCE , IC = 3mA VGE = 20V, VCE = 0V Min Typ 1.85 2.25 5.8 Max 250 2.25 6.5 600 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= 15V ; VCE=600V IC=75A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 75A RG = 2.2 Inductive Switching (150C) VGE = 15V VBus = 600V IC = 75A RG = 2.2 TJ = 25C VGE = 15V VBus = 600V TJ = 150C IC = 75A TJ = 25C RG = 2.2 TJ = 150C VGE 15V ; VBus = 900V tp 10s ; Tj = 150C Min Typ 4.4 0.29 0.24 0.57 130 20 300 45 150 35 350 80 3.4 8.5 4.2 7.2 300 ns Max Unit nF C
ns
mJ mJ A
Reverse diode ratings and characteristics
Symbol VRRM IRM IF VF trr Qrr Er Characteristic
Maximum Peak Repetitive Reverse Voltage
Test Conditions VR=1200V IF = 75A VGE = 0V Tj = 25C Tc = 80C Tj = 25C Tj = 150C Tj = 25C IF = 75A VR = 600V Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C
Min 1200
Typ
Max 250
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
90 1.7 1.65 155 300 7.3 15.2 2.6 5.5
Unit V A A V
April, 2009 2-5 APTGL90A120T1G - Rev 0
2.2
ns C mJ
di/dt =1900A/s
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APTGL90A120T1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.39 0.62 175 125 100 4.7 80 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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3-5
APTGL90A120T1G - Rev 0
April, 2009
APTGL90A120T1G
Typical Performance Curve
150 125
TJ=25C
Output Characteristics (VGE=15V)
Output Characteristics 150 125 100 IC (A) TJ = 150C
VGE=19V VGE=15V
IC (A)
100
TJ=150C
75 50 25 0 0 1 2 VCE (V) 3 4
75 50 25 0 0 1 2 VCE (V) 3 4
VGE=9V
150 125 100 IC (A)
Transfert Characteristics
TJ=25C
30 25 20 E (mJ) 15 10
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 2.2 TJ = 150C
Eon
75 50 25 0 5 6 7 8 9 10 11 12 13 VGE (V) Switching Energy Losses vs Gate Resistance 20
Eon
Eoff Er Eon
TJ=150C
5 0 0 25 50
75 IC (A)
100
125
150
Reverse Bias Safe Operating Area 160
16 E (mJ) 12 8 4 0 0
Eoff
IC (A)
VCE = 600V VGE =15V IC = 75A TJ = 150C
120
80
VGE=15V TJ=150C RG=2.2
Er
40
0 5 10 15 20 Gate Resistance (ohms) 25 0 300 600 900 VCE (V) 1200 1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W)
0.9 0.7 0.5 0.3
IGBT
0.2
0.1
0.1 0.05
Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGL90A120T1G - Rev 0
April, 2009
0.3
APTGL90A120T1G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100 80 60 40 20 0 20 40 60 IC (A) 80 100 120
Hard switching
Forward Characteristic of diode
IF, Forward Current (A)
VCE=600V D=50% RG=2.2 TJ=150C Tc=75C
150 125 100 75 50 25 0 0 0.5 1
TJ=150C
TJ=25C
ZCS ZVS
1.5
2
2.5
VF, Anode to Cathode Voltage (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7 0.5 Diode
0 0.00001
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGL90A120T1G - Rev 0
April, 2009

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